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International Journal 게시판 내 결과

• [2017] Hyunwoo Kim, "On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process" 새창

  Hyunwoo Kim, Hunhee Lee, Young Seok Kim, Suhyeong Lee, Hongjeon Kang, Jaeyoung Heo and Hyeong Joon Kim "On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process" CrystEngComm, 19, 2359-2366 (2017)

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2017-09-05 09:21:54
• [2015] Hunhee Lee, "Comparative Study of 4H-SiC Epitaxial Layers Grown on 4◦Off-Axis Si- and C-Face Substrates Using Bistrimethylsilylmethane Precursor" 새창

  Hunhee Lee, Hyunwoo Kim, Han Seok Seo, Dohyun Lee, Changhyun Kim, Suhyeong Lee, Hongjeon Kang, Jaeyeong Heo, and Hyeong Joon Kim, "Comparative Study of 4H-SiC Epitaxial Layers Grown on 4o Off-Axis Si- and C-Face Substrates Using Bistrimethylsilylmethane Precursor", ECS Journal of Solid Sta…

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:53:38
• [2009] Ho Keun Song, "Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC" 새창

  Ho Keun Song, Jeong Hyun Moon, Hyeong Joon Kim, and Mehran Mehregany "Observation of stacking faults formed during homoepitaxial growth of p-type 4H-SiC" Applied Physics Letters, 94 (11), 112109 (2009)

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:33:10
• [2008] Ho Keun Song, "Homoepitaxial Growth of Vanadium-Doped Semi-insulating 4H-SiC Using Bis-trimethylsilymethane and Bis-cyclopentandienylvanadium Precursors" 새창

  Ho Keun Song, Sun Young Kwon, Jeong Hyun Moon, Han Seok Seo, Jeong Hyuk Yim, Jong Ho Lee and Hyeong Joon Kim "Homoepitaxial Growth of Vanadium-Doped Semi-insulating 4H-SiC Using Bis-trimethylsilymethane and Bis-cyclopentandienylvanadium Precursors" Journal of The Electrochemical Society,…

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:29:00
• [2007] Ho Keun Song, "Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates" 새창

  Ho Keun Song, Han Seok Seo, Sun Young Kwon, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee, Hyeong Joon Kim "Heavily nitrogen-doped 4H-SiC homoepitaxial films grown on porous SiC substrates" Journal of Crystal Growth, 305, 83-87 (2007)

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:26:27
• [2006] Ho Keun Song, "Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer" 새창

  Ho Keun Song, Sun Young Kwon, Han Seok Seo, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee, and Hyeong Joon Kim "Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer" Applied Physics Letters, Vol 89, pp. 152112 (2006)

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:24:18
• [2005] Ho Keun Song, "Homoepitaxial Growth of Iron-Doped 4H-SiC by Using Bis-trimethylsilylmethane and Ferrocene Precursors" 새창

  Ho Keun Song, Hoon Joo Na, Sang Yong Jung, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee and Hyeong Joon Kim "Homoepitaxial Growth of Iron-Doped 4H-SiC by Using Bis-trimethylsilylmethane and Ferrocene Precursors" Journal of the Korean Physical Society, Vol. 47, November (2005)

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:22:05
• [2005] Jae Kyeong Jeong, "Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition" 새창

  Jae Kyeong Jeong, Jung-Hae Choi, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim "Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition" Journal of Crystal Growth 276 , pp. 407…

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-09 12:21:23
• [2004] Jae Kyeong Jeong, "Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate" 새창

  Jae Kyeong Jeong, Jung-Hae Choi, Cheol Seong Hwang, Hyeong Joon Kim, Jae-Hoon Lee, Jung-Hee Lee, Chang-Soo Kim "Influence of Al doping on lattice strain and electrical properties of epitaxial GaN films grown by metalorganic chemical vapor deposition on Al2O3 substrate" Applied Physics Le…

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-06 19:52:55
• [2004] Jae Kyeong Jeong, "Improvement in the Crystalline Quality of Epitaxial GaN Films Grow by MOCVD by Adopting Porous 4H-SiC Substrate" 새창

  Jae Kyeong Jeong, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim "Improvement in the Crystalline Quality of Epitaxial GaN Films Grow by MOCVD by Adopting Porous 4H-SiC Substrate" Electrochemical Solid-State Letters, 7 (4), 43, 2004

  관리자 쪽지보내기 메일보내기 자기소개 전체게시물 2016-05-06 19:47:53