현재접속자

본문 바로가기

사이트 내 전체검색


현재접속자
번호 이름 위치
001 54.♡.219.236 박막재료연구실
002 207.♡.13.64 115 > Domestic Conference
003 46.♡.168.147 [2007] Kuan Yew Cheong, "Electronic Properties of Atomic-Layer-Deosited Al2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H SiC" > International Journal
004 46.♡.168.136 159 > International Conference
005 46.♡.168.137 1996 > International Journal
006 46.♡.168.139 71 > International Conference
007 46.♡.168.133 [2004] Chihoon Lee, "Phosphorus ion implantation and POCl3 doping effects of  n+-polycrystalline-silicon/high-k gate dielectric (HfO2 and Al2O3) films" > International Journal
008 207.♡.13.59 안영배 (Youngbae Ahn) > Allumni
009 46.♡.168.129 [1995] 김형준, "Ta2O5 게이트 박막을 이용한 TFT 특성 고찰" > Domestic Proceeding
010 207.♡.13.155 전체검색 결과
011 46.♡.168.138 오류안내 페이지
012 46.♡.168.131 [2011] Jeong Hyuk Yim, "Short-channel Effect in 4H-SiC Ion-implanted Planar MESFETs" > International Journal
013 40.♡.167.180 Domestic Conference 2 페이지
014 46.♡.168.144 [2009] Byung Joon Choi, "Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition" > International Journal
015 46.♡.168.143 86 > International Conference
016 46.♡.168.141 44 > Domestic Journal
017 46.♡.168.146 120 > International Conference
018 46.♡.168.149 149 > Domestic Conference
019 46.♡.168.145 [2003] In Sang Jeon, "Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor" > International Journal
020 46.♡.168.130 오류안내 페이지
021 46.♡.168.140 149 > International Conference


(08826) 서울시 관악구 관악로1 서울대학교 30동 521호~526호
(Tel) 02-880-7168, 02-880-7378  (FAX) 02-874-7626
Copyright © Thin Film Research Lab. . All rights reserved.
상단으로
PC 버전으로 보기