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현재접속자
번호 이름 위치
001 46.♡.168.71 [2004] S. G. Kim, "Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator" > International Proceeding
002 54.♡.78.121 자유게시판 1 페이지
003 46.♡.168.80 오류안내 페이지
004 46.♡.168.68 [2011] Seung Wook Ryu, "SiO2 doped Ge2Sb2Te5 thin films with high thermal efficiency for applications in phase change random access memory" > International Journal
005 46.♡.168.67 53 > International Conference
006 46.♡.168.75 이미정 (Mi Jung Lee) > Allumni
007 46.♡.168.65 NPG Asia Material에 소개된 정재경 박사님 논문 > 자유게시판
008 207.♡.13.231 [2014] 박은길, "Electrical Evaluation of The Crack Formation in Al2O3 Encapsulation Layer for Flexible Organic Light Emitting Devices" > International Conference
009 46.♡.168.74 28 > Domestic Conference
010 46.♡.168.79 [2003] Jae Bin Lee, "Effects of surface roughness of substrates on the c-axis preferred orientation of ZnO films deposited by rf magnetron sputtering""Effects of surface roughness of substrates on the c-axis preferred orientation of ZnO films deposited > International Journal
011 46.♡.168.77 오류안내 페이지
012 46.♡.168.78 [2001] J. K. Jeong, "Epitaxial growth of SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor" > Domestic Proceeding
013 46.♡.168.72 128 > Domestic Conference
014 46.♡.168.69 7 > Domestic Conference
015 46.♡.168.76 [2002] Hoon Joo Na, "Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance" > International Proceeding
016 46.♡.168.73 [2004] Jae Kyeong Jeong, "Improvement in the Crystalline Quality of Epitaxial GaN Films Grow by MOCVD by Adopting Porous 4H-SiC Substrate" > International Journal

접속자집계

오늘
43
어제
44
최대
164
전체
46,013

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